advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -30v simple drive requirement r ds(on) 26m dual p mosfet package i d -7.4a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 200712191 thermal data parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 storage temperature range continuous drain current 3 -5.9 pulsed drain current 1 -30 parameter drain-source voltage gate-source voltage continuous drain current 3 AP4957AGM rating rohs-compliant product 1 -30 20 -7.4 s1 g1 s2 g2 d1 d1 d2 d2 so-8 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-7a - - 26 m v gs =-4.5v, i d =-5a - - 36 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-7a - 7 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-7a - 16 26 nc q gs gate-source charge v ds =-24v - 2.8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 9.3 - nc t d(on) turn-on delay time 2 v ds =-15v - 9 - ns t r rise time i d =-1a - 6.5 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 40 - ns t f fall time r d =15 -26- ns c iss input capacitance v gs =0v - 1215 1950 pf c oss output capacitance v ds =-25v - 190 - pf c rss reverse transfer capacitance f=1.0mhz - 185 - pf r g gate resistance f=1.0mhz - 5.3 8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-7a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 : /w when mounted on min. copper pad. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. AP4957AGM this product has been qualified for consumer market. applications or uses as criterial component in life support 2
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP4957AGM 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 0 10 20 30 40 01234567 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 20 24 28 32 36 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-5a t a =25 : 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-7a v g =-10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP4957AGM q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 7 a v ds = - 24 v 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 10 20 30 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 4957a g m ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement
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